DMP2070UCB6
1.4
10
1.2
8
1.0
0.8
0.6
6
4
0.4
2
0.2
0
-50
-25
0 25 50 75 100 125 150
0
0.4
0.6 0.8 1.0
1.2
T A , AMBIENT TEMPERATURE (°C)
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
1,000
1,000
-V SD , SOURCE-DRAIN VOLTAGE (V)
Fig. 8 Diode Forward Voltage vs. Current
T A = 150°C
100
T A = 125°C
100
C iss
10
1
T A = 85°C
C oss
T A = 25°C
0.1
C rss
0.01
10
0
5 10 15
20
0.001
0
2 4 6 8 10 12
8
6
-V DS , DRAIN-SOURCE VOLTAGE (V)
Fig. 9 Typical Junction Capacitance
f = 1MHz
-V DS , DRAIN-SOURCE VOLTAGE(V)
Fig. 10 Typical Drain-Source Leakage Current vs. Voltage
100
R DS(on)
Limited
10
DC
4
2
1
0.1
P W = 10s
P W = 1s
P W = 100ms
P W = 10ms
P W = 1ms
P W = 10μs
0
0
1 2 3 4
5
0.01
0.01
0.1 1 10
100
Q g , TOTAL GATE CHARGE (nC)
Fig. 11 Gate-Charge Characteristics
-V DS , DRAIN-SOURCE VOLTAGE (V)
Fig. 12 SOA, Safe Operation Area
DMP2070UCB6
Document number: DS35553 Rev. 2 - 2
4 of 6
www.diodes.com
October 2011
? Diodes Incorporated
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